Hexagonal boron nitride as a tunnel barrier for ferromagnetic tunnel junctions

Tohoku University's Center for Innovative Integrated Electronic Systems (CIES) has been working collaboratively with the University of Cambridge under the core-to-core project (PL: Prof. Endoh). JSPS has announced an analysis using two-dimensional (2D) materials (hexagonal boron nitride; h-BN) as a tunnel barrier for ferromagnetic tunnel junctions (MTJ), which can expect a tunnel magnetoresistance (TMR) ratio of up to 1,000% and interfacial perpendicular magnetic anisotropy (IPMA).