Imec demonstrates 20-nm pitch line/space resist imaging with high-NA EUV interference lithography

Imec reports for the first time the use of a 13.5-nm, high-harmonic-generation source for the printing of 20-nm pitch line/spaces using interference lithographic imaging of an Inpria metal-oxide resist under high-numerical-aperture (high-NA) conditions. The demonstrated high-NA capability of the EUV interference lithography using this EUV source presents an important milestone of the AttoLab, a research facility initiated by imec and KMLabs to accelerate the development of the high-NA patterning ecosystem on 300 mm wafers. The interference tool will be used to explore the fundamental dynamics of photoresist imaging and provide patterned 300 mm wafers for process development before the first 0.55 high-NA EXE5000 prototype from ASML becomes available.